Send Message

CSD19538Q3A / MOSFET 100-V / N channel NexFET power MOSFET

1
MOQ
contact us
Price
CSD19538Q3A / MOSFET 100-V / N channel NexFET power MOSFET
Features Gallery Product Description Request A Quote
Features
Specifications
Packaging Details: Standard/New/Original
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Qg - Gate Charge: 4.3 NC
Pd - Power Dissipation: 2.8 W
Rise Time: 3 Ns
Date Code: 22+
Basic Infomation
Place of Origin: Malaysia
Brand Name: TI
Model Number: CSD19538Q3A
Payment & Shipping Terms
Delivery Time: in stock
Payment Terms: L/C, D/A, D/P, T/T, Western Union, MoneyGram
Supply Ability: contact us
Product Description

CSD19538Q3A / MOSFET 100-V / N channel NexFET power MOSFET

 

 Applications

• Power Over Ethernet (PoE)

• Power Sourcing Equipment (PSE)

• Motor Control 3

 

Description

This 100-V, 49-mΩ, SON 3.3-mm × 3.3-mm NexFET™ power MOSFET is designed to minimize conduction losses and reduce board footprint in PoE applications.

 

Product Attribute Attribute Value
Texas Instruments
Product Category: MOSFET
RoHS: Details
Si
SMD/SMT
VSONP-8
N-Channel
1 Channel
100 V
14.4 A
61 mOhms
- 20 V, + 20 V
3.2 V
4.3 nC
- 55 C
+ 150 C
2.8 W
Enhancement
NexFET
Reel
Cut Tape
MouseReel
Brand: Texas Instruments
Configuration: Single
Fall Time: 2 ns
Height: 0.9 mm
Length: 3.15 mm
Product Type: MOSFET
Rise Time: 3 ns
Series: CSD19538Q3A

Factory Pack Quantity:

2500
Subcategory: MOSFETs
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 7 ns
Typical Turn-On Delay Time: 5 ns
Width: 3 mm
Unit Weight: 0.000963 oz

 

CSD19538Q3A / MOSFET 100-V / N channel NexFET power MOSFET 0

Recommended Products
Get in touch with us
Contact Person : Chen
Characters Remaining(20/3000)