STH315N10F7-2 / TO-263-3 / MOSFETs
These N-channel Power MOSFETs utilize STripFET F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.
| Product Attribute | Attribute Value |
|---|---|
| STMicroelectronics | |
| Product Category: | MOSFET |
| Si | |
| SMD/SMT | |
| H2PAK-2 | |
| N-Channel | |
| 1 Channel | |
| 100 V | |
| 180 A | |
| 2.3 mOhms | |
| - 20 V, + 20 V | |
| 3.5 V | |
| 180 nC | |
| - 55 C | |
| + 175 C | |
| 315 W | |
| Enhancement | |
| AEC-Q101 | |
| STripFET | |
| Reel | |
| Cut Tape | |
| MouseReel | |
| Brand: | STMicroelectronics |
| Configuration: | Single |
| Fall Time: | 40 ns |
| Product Type: | MOSFET |
| Rise Time: | 108 ns |
| Series: | STH315N10F7-2 |
| Factory Pack Quantity: | 1000 |
| Subcategory: | MOSFETs |
| Transistor Type: | 1 N-Channel |
| Typical Turn-Off Delay Time: | 148 ns |
| Typical Turn-On Delay Time: | 62 ns |
| Unit Weight: | 0.139332 oz |
