LMG1210RVRR / WQFN-19 / Power Management ICs
The LMG1210 is a 200-V, half-bridge MOSFET and Gallium Nitride Field Effect Transistor (GaN FET) driver designed for ultra-high frequency, highefficiency applications that features adjustable deadtime capability, very small propagation delay, and 3.4-ns high-side low-side matching to optimize system efficiency. This part also features an internal LDO which ensures a gate-drive voltage of 5-V regardless of supply voltage.
To enable best performance in a variety of applications, the LMG1210 allows the designer to choose the optimal bootstrap diode to charge the high-side bootstrap capacitor. An internal switch turns the bootstrap diode off when the low side is off, effectively preventing the high-side bootstrap from overcharging and minimizing the reverse recovery charge. Additional parasitic capacitance across the GaN FET is minimized to less than 1 pF to reduce additional switching losses.
The LMG1210 features two control input modes: Independent Input Mode (IIM) and PWM mode. In IIM each of the outputs is independently controlled by a dedicated input. In PWM mode the two complementary output signals are generated from a single input and the user can adjust the dead time from 0 to 20 ns for each edge. The LMG1210 operates over a wide temperature range from –40°C to 125°C and is offered in a low-inductance WQFN package.
| Product Attribute | Attribute Value |
|---|---|
| Texas Instruments | |
| Product Category: | Gate Drivers |
| MOSFET Gate Drivers | |
| High-Side, Low-Side | |
| SMD/SMT | |
| WQFN-19 | |
| 2 Driver | |
| 2 Output | |
| 3 A | |
| 4.75 V | |
| 18 V | |
| 500 ps | |
| 500 ps | |
| - 40 C | |
| + 125 C | |
| LMG1210 | |
| Reel | |
| Cut Tape | |
| MouseReel | |
| Brand: | Texas Instruments |
| Logic Type: | TTL |
| Maximum Turn-Off Delay Time: | 18 ns |
| Maximum Turn-On Delay Time: | 18 ns |
| Moisture Sensitive: | Yes |
| Off Time - Max: | 18 ns |
| Operating Supply Current: | 380 uA |
| Output Voltage: | 5 V |
| Product Type: | Gate Drivers |
| Propagation Delay - Max: | 20 ns |
| Rds On - Drain-Source Resistance: | 400 mOhms |
| Factory Pack Quantity: | 3000 |
| Subcategory: | PMIC - Power Management ICs |
| Technology: | GaN |
| Tradename: | GaN |
| Unit Weight: | 0.000945 oz |
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